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6#
发表于 2007-9-19 02:23:40
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只看该作者
来自: 江苏南京 来自 江苏南京
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=14A 200 mJ
IAS Drain-Source Avalanche Current 56 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 μA 30 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA,Referenced to 25°C 23 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA
IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 1 1.5 3 V
ΔVGS(th)
ΔTJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 μA,Referenced to 25°C
-4 mV/°C
RDS(on) Static Drain–Source
On–Resistance
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 12 A
VGS = 10 V, ID = 14 A,TJ=125°C
8
10
12
9.5
13
16
mΩ
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 5 V, ID = 9.5 A 41 S
Dynamic Characteristics
Ciss Input Capacitance 2180 pF
Coss Output Capacitance 500 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
255 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 13 24 ns
tr Turn–On Rise Time 14 26 ns
td(off) Turn–Off Delay Time 43 70 ns
tf Turn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
15 27 ns
Qg Total Gate Charge 23 33 nC
Qgs Gate–Source Charge 7 nC
Qgd Gate–Drain Charge
VDS = 40V, ID = 9.5 A,
VGS = 5 V
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.3 A
VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 0.72 1.2 V |
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